Methods for producing new silicon light source and devices
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United States of America Patent
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May 10, 2016
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May 14, 2015
app pub date -
Apr 30, 2012
filing date -
Apr 30, 2012
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Abstract
The present invention relates to production method and device applications of a new silicon (Si) semiconductor light source that emits at a single wavelength at 1320 nm with a full width at half maximum (FWHM) of less than 200 nm and a photoluminescence quantum efficiency of greater than 50% at room temperature. The semiconductor that is the base for the new light source includes a surface which is treated by an acid vapor involving heavy water or Deuterium Oxide (D2O) and a surface layer producing the light source at 1320 nm.
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