Memristive element and electronic memory based on such elements
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 3, 2016
Grant Date -
Oct 24, 2013
app pub date -
Dec 14, 2011
filing date -
Dec 17, 2010
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The invention relates to a memristive element (M) formed by: a first electrode (10); a second electrode (30); and an active region (20) making direct electrical contact with said first and second electrodes, characterized in that said active region essentially consists of a thin film of an insertion compound containing at least one alkali metal, said compound being an oxide or chalcogenide of at least one transition metal and being able to conduct both electrons and ions. Non-volatile electronic memory formed from a plurality of such memristive elements.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully