PN junctions and methods
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United States of America Patent
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May 3, 2016
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app pub date -
Aug 28, 2009
filing date -
Aug 28, 2009
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Abstract
A PN junction includes first and second areas of silicon, wherein one of the first and second areas is n-type silicon and the other of the first and second areas is p-type silicon. The first area has one or more projections which at least partially overlap with the second area, so as to form at least one cross-over point, the cross-over point being a point at which an edge of the first area crosses over an edge of the second area.
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