Hybrid wide-bandgap semiconductor bipolar switches
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United States of America Patent
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May 3, 2016
Grant Date -
Apr 30, 2015
app pub date -
Oct 30, 2014
filing date -
Oct 30, 2013
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Abstract
A hybrid semiconductor bipolar switch in which a normally-on high-voltage wide-bandgap semiconductor bipolar switch and a normally-off field effect transistor are connected in a cascode (Baliga-pair) configuration. The switch may be constructed as a stacked hybrid device where a discrete transistor is bonded on top of a bipolar switch. Power systems may use plural switches paired with anti-parallel diodes.
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