Ytterbium sputtering target and method of producing said target

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United States of America Patent

PATENT NO 9328411
APP PUB NO 20100044223A1
SERIAL NO

12594492

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Abstract

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Provided is a method of producing an ytterbium sputtering target, wherein an ytterbium target material having Vickers hardness (Hv) of the material surface of 15 or more and 40 or less is prepared in advance, and a surface of the ytterbium target material having the foregoing surface hardness is subject to final finish processing by way of machining. With the ytterbium sputtering target, present invention aims to remarkably reduce the irregularities (gouges) on the target surface after the final finish processing of the target material, and to inhibit the generation of particles during sputtering.

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Patent Owner(s)

Patent OwnerAddress
JX NIPPON MINING & METALS CORPORATION6-3 OTEMACHI 2-CHOME CHIYODA-KU TOKYO 1008164

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tsukamoto, Shiro Ibaraki, JP 26 181

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