Method for forming through substrate vias with tethers
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 26, 2016
Grant Date -
Mar 31, 2016
app pub date -
Feb 11, 2015
filing date -
Sep 29, 2014
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for forming through silicon vias (TSVs) in a silicon substrate is disclosed. The method involves forming a silicon post as an substantially continuous annulus in a first side of a silicon substrate, removing material from an opposite side to the level of the substantially continuous annulus, removing the silicon post and replacing it with a metal material to form a metal via extending through the thickness of the substrate. The substantially continuous annulus may be interrupted by at least one tether which connects the silicon post to the silicon substrate. The tether may be formed of a thing isthmus of silicon, or some suitable insulating material.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully