Gas cluster ion beam etching process for etching Si-containing, Ge-containing, and metal-containing materials
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United States of America Patent
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Apr 26, 2016
Grant Date -
Aug 1, 2013
app pub date -
Mar 14, 2013
filing date -
Sep 1, 2011
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Abstract
A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB etch processing utilizes Si-containing and/or Ge-containing etchants. Further yet, the GCIB etch processing facilitates etching Si-containing material, Ge-containing material, and metal-containing material.
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