Temperature compensation in a semiconductor micromechanical resonator via charge carrier depletion
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United States of America Patent
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Apr 19, 2016
Grant Date -
Apr 25, 2013
app pub date -
Oct 19, 2011
filing date -
Oct 19, 2010
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Abstract
A semiconductor resonator has a substrate with a thickness extending between a first end and a second end and a pn-junction along the thickness of the substrate forming a free charge carrier depletion region. In another embodiment, a semiconductor resonator has a substrate with a crystal lattice doped at degenerate levels such that the flow of free charge carriers can be minimized. A method of compensating a temperature coefficient of a semiconductor resonator by creating a pn-junction based free charge carrier depletion region within a thickness of a substrate of the resonator is also disclosed.
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