FinFET spacer formation by oriented implantation
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United States of America Patent
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Apr 19, 2016
Grant Date -
Jan 24, 2013
app pub date -
Sep 27, 2012
filing date -
Nov 3, 2009
priority date (Note) -
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Abstract
A FinFET having spacers with a substantially uniform profile along the length of a gate stack which covers a portion of a fin of semiconductor material formed on a substrate is provided by depositing spacer material conformally on both the fins and gate stack and performing an angled ion impurity implant approximately parallel to the gate stack to selectively cause damage to only spacer material deposited on the fin. Due to the damage caused by the angled implant, the spacer material on the fins can be etched with high selectivity to the spacer material on the gate stack.
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