Method to mitigate resist pattern critical dimension variation in a double-exposure process
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United States of America Patent
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Apr 19, 2016
Grant Date -
Oct 7, 2010
app pub date -
Apr 7, 2009
filing date -
Apr 7, 2009
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Abstract
A method to mitigate resist pattern critical dimension (CD) variation in a double-exposure process generally includes forming a photoresist layer over a substrate; exposing the photoresist layer to a first radiation; developing the photoresist layer to form a first pattern in the photoresist layer; forming a topcoat layer over the photoresist layer; exposing the topcoat layer and the photoresist layer to a second radiation; removing the topcoat layer; and developing the photoresist layer to form a second pattern in the photoresist layer.
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