Method for evaluating oxide semiconductor thin film, and method for quality control of oxide semiconductor thin film
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United States of America Patent
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Apr 19, 2016
Grant Date -
Dec 10, 2015
app pub date -
Sep 4, 2013
filing date -
Jan 15, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
This method for evaluating an oxide semiconductor thin film includes evaluating the stress stability of an oxide semiconductor thin film on the basis of the light emission intensity of luminescent light excited when radiating an electron beam or excitation light at a sample at which the oxide semiconductor thin film is formed. The stress stability of the oxide semiconductor thin film is evaluated on the basis of the light emission intensity (L1) observed in the range of 1.6-1.9 eV of the luminescent light excited from the oxide semiconductor thin film.
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International Classification(s)
- H01J:ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- F21V:FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES....
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- G01J:MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTE....
- G21H:OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICA....
- G21K:TECHNIQUES FOR HANDLING PARTICLES OR ELECTROMAGNET....
- G01N:INVESTIGATING OR ANALYSING MATERIALS BY DETERMININ....
- G01T:MEASUREMENT OF NUCLEAR OR X-RADIATION
- 2013 Application Filing Year
- H01J Class
- 2042 Applications Filed
- 1790 Patents Issued To-Date
- 87.66 % Issued To-Date
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- H01J Class
- 0 % this patent is cited more than
- 9 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Oct 19, 2027 |
