Hydrogen surface-treated graphene, formation method thereof and electronic device comprising the same
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United States of America Patent
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Apr 19, 2016
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Apr 23, 2015
app pub date -
Oct 17, 2014
filing date -
Oct 17, 2013
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Abstract
The present invention relates to hydrogen surface-treated graphene, a formation method thereof, and an electronic device including the same. The graphene according to one exemplary embodiment of the present invention can be useful in preparing hydrogen surface-treated graphene having a band gap using simple methods through indirect hydrogen plasma treatment. Also, the graphene according to one exemplary embodiment of the present invention can be useful in forming two regions having different band gaps through the indirect hydrogen plasma treatment, and thus can be useful in reducing the processing time and the processing cost since the graphene is directly applicable to electronic devices such as transistors, and touch panels.
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