Surface doping and bandgap tunability in hydrogenated graphene

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United States of America Patent

PATENT NO 9312130
SERIAL NO

13942257

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Abstract

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A method of introducing a bandgap in single layer graphite on a SiO2 substrate comprising the steps of preparing graphene flakes and CVD grown graphene films on a SiO2/Si substrate and performing hydrogenation of the graphene. Additionally, controlling the majority carrier type via surface adsorbates.

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Patent Owner(s)

Patent OwnerAddress
THE GOVERNMENT OF THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY COMPANY875 NORTH RANDOLPH STREET SUITE 1425 ARLINGTON VA 22203

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baldwin, Jeffrey W Fairfax, US 13 24
Bulat-Jara, Felipe Washington, US 2 2
Burgess, James S Nahsua, US 3 2
Friedman, Adam L Silver Spring, US 15 49
Houston, Brian H Fairfax, US 19 137
Matis, Bernard R Alexandria, US 7 4

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