Method for decreasing an excess carrier induced degradation in a silicon substrate
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United States of America Patent
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Apr 5, 2016
Grant Date -
Aug 28, 2014
app pub date -
Oct 1, 2012
filing date -
Sep 30, 2011
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Abstract
A method (100) for decreasing an excess carrier induced degradation in a silicon substrate, includes providing (120, 130) a charged insulation layer capable of retaining charge on the silicon substrate for generating a potential difference between the charged insulation layer and the silicon substrate, and heat treating (140) the silicon substrate for enabling an impurity causing the excess carrier induced degradation and being in the silicon substrate to diffuse due to the potential difference into a boundary of the silicon substrate and the insulation layer.
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