Oxygen-doped gallium nitride crystal substrate
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United States of America Patent
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Apr 5, 2016
Grant Date -
Jul 9, 2015
app pub date -
Dec 9, 2014
filing date -
Apr 12, 2001
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Abstract
Disclosed is a gallium nitride crystal substrate having a top surface, a bottom surface, regions of higher oxygen concentrations measured by SIMS, and other regions of lower oxygen concentrations measured by SIMS. The top surface is a C-plane surface. The ratio of the highest oxygen concentration to the lowest oxygen concentration is equal to or more than fifty.
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