Finding optimal read thresholds and related voltages for solid state memory
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United States of America Patent
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Apr 5, 2016
Grant Date -
May 21, 2015
app pub date -
Nov 18, 2014
filing date -
Jan 10, 2012
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Abstract
A read is performed using a first iteration of a read threshold voltage that is set to a default voltage to obtain a first characteristic. A second iteration of the read threshold voltage is generated using the default voltage and an offset. A read is performed using the second iteration of the read threshold voltage to obtain a second characteristic. A third iteration of the read threshold voltage is generated using the first and second characteristics. A read is performed using the third iteration of the read threshold voltage to obtain a third characteristic. It is determined if the third characteristic is one of the two characteristics closest to a stored characteristic. If so, a fourth iteration of the read threshold voltage is generated using the two closest characteristics.
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