Method for forming a microfabricated structure
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United States of America Patent
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Apr 5, 2016
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app pub date -
Jun 15, 2015
filing date -
Jun 15, 2015
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Abstract
A method for forming a feature in a device layer, including forming a first layer of a liftoff material and a second layer of photoresist over the liftoff material, exposing the photoresist and developing the photoresist and the liftoff layer. The photoresist develops at a slower rate than the liftoff layer. The development results in a first opening in the lift off layer and a second opening in the photoresist layer wherein the first opening is smaller than the second opening because of the different developing rates. The device layer is then dry etched or ion milled through the opening. Subsequent removal of the first layer and second layer leaves a clean surface of the patterned device layer, without the fences that can be formed using other methods.
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