Device structure and methods of forming superjunction lateral power MOSFET with surrounding LDD
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United States of America Patent
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Mar 29, 2016
Grant Date -
Jan 22, 2015
app pub date -
Jul 16, 2014
filing date -
Jul 19, 2013
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Abstract
A semiconductor device has a substrate and a gate formed over the substrate. An LDD region is formed in the substrate adjacent to the gate. A superjunction is formed in the LDD region while a portion of the LDD region remains between the superjunction and gate. A mask is formed over the substrate. A first region is doped with a first type of dopant using the mask. A stripe is doped with a second type of dopant using a portion of the mask. A drain contact region is formed in the substrate. The first region extends to the drain contact region. The first region and stripe are formed using chain implants. A source field plate and drain field plate are formed over the substrate. A trench is formed in the substrate. A source contact region is formed in the trench.
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