Method for producing semiconductor device and semiconductor device
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United States of America Patent
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Mar 29, 2016
Grant Date -
Oct 22, 2015
app pub date -
Jun 18, 2015
filing date -
Dec 2, 2011
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Abstract
A semiconductor device includes first and second fin-shaped semiconductor layers on a substrate, where the first and second fin-shaped semiconductor layers correspond to the dimension of a sidewall pattern around a dummy pattern. First and second pillar-shaped semiconductor layers reside on the first and second fin-shaped semiconductor layers, respectively. A gate insulating film and metal gate electrode are around underlying gate insulating layers on each fin-shaped semiconductor layer. A metal gate line is connected to the metal gate electrodes and extends in a direction perpendicular to the first and second fin-shaped semiconductor layers. Contacts reside on the upper portion of diffusion layers in upper portions of the first and second pillar-shaped semiconductor layers and are directly connected to the diffusion layers.
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