Ion source and repeller structure
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United States of America Patent
Stats
-
Mar 29, 2016
Grant Date -
Oct 11, 2012
app pub date -
Feb 29, 2012
filing date -
Apr 5, 2011
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A repeller structure comprises a target member configured to be sputtered by a plasma to emit given ions, and provided with a through-hole penetrating between a sputterable surface and a reverse surface thereof, and a repeller body which supports the target member while being inserted in the through-hole of the target member, and has a repeller surface exposed on the side of the sputterable surface through the through-hole. The target member is made of a material selected from the group consisting of gallium oxide, gallium nitride, gallium phosphide, gallium arsenide and gallium fluoride.
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International Classification(s)
Cited Art Landscape
Patent Citation Ranking
- 7 Citation Count
- C23C Class
- 18.59 % this patent is cited more than
- 9 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Sep 29, 2027 |
