LDMOS with no reverse recovery
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United States of America Patent
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Mar 22, 2016
Grant Date -
Oct 6, 2011
app pub date -
Mar 30, 2010
filing date -
Mar 30, 2010
priority date (Note) -
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Abstract
A transistor includes a source region including a first impurity region implanted into a substrate, a drain region including a second impurity region implanted into the substrate, and a gate including an oxide layer formed over the substrate and a conductive material formed over the oxide layer, the oxide layer comprising a first side and a second side, the first side formed over a portion of the first impurity region and the second side formed over a portion of the second impurity region, the first side having a thickness of less than about 100 Å, and the second side having a thickness equal to or greater than 125 Å.
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