Silicon carbide semiconductor device and method for manufacturing the same
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United States of America Patent
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Mar 22, 2016
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N/A
app pub date -
Oct 23, 2012
filing date -
Nov 21, 2011
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Abstract
A silicon carbide layer includes a first region having a first conductivity type, a second region provided on the first region and having a second conductivity type, and a third region provided on the second region and having the first conductivity type. A trench having an inner surface is formed in the silicon carbide layer. The trench penetrates the second and third regions. The inner surface of the trench has a first side wall and a second side wall located deeper than the first side wall and having a portion made of the second region. Inclination of the first side wall is smaller than inclination of the second side wall.
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