Sputtering target material for producing intermediate layer film of perpendicular magnetic recording medium and thin film produced by using the same
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United States of America Patent
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Mar 22, 2016
Grant Date -
Jan 27, 2011
app pub date -
Apr 30, 2009
filing date -
Apr 30, 2008
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Abstract
There is disclosed a sputtering target material for producing an intermediate layer film of a perpendicular magnetic recording medium, which is capable of dramatically reducing the crystal grain size of a thin film formed by sputtering. The sputtering target material comprises, in at %, 1 to 20% of W; 0.1 to 10% in total of one or more elements selected from the group consisting of P, Zr, Si and B; and balance Ni.
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