Radiation assisted electrostatic separation of semiconductor materials

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United States of America Patent

PATENT NO 9289781
APP PUB NO 20120234730A1
SERIAL NO

13144869

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Abstract

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A method of separating material includes providing a mixture of a first material, such as a semiconductor, and a second material, such as an insulator or a different semiconductor. The mixture can be irradiated using a light source at a wavelength that causes the first material's conductivity to increase while leaving the second material's conductivity (substantially) unchanged. Placing the mixture in contact with a ground electrode discharges the first material but not the second material due to the difference in their conductivities. Applying an electric field to the discharged mixture separates the discharged first material from the second material.

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Patent Owner(s)

Patent OwnerAddress
EMPIRE TECHNOLOGY DEVELOPMENT LLC2711 CENTERVILLE ROAD SUITE 400 WILMINGTON DE 19808

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yager, Thomas A Encinitas, US 25 236

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