Silicon-embedded copper nanostructure network for high energy storage

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United States of America Patent

PATENT NO 9287560
SERIAL NO

14255418

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Abstract

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Provided herein are nanostructure networks having high energy storage, electrochemically active electrode materials including nanostructure networks having high energy storage, as well as electrodes and batteries including the nanostructure networks having high energy storage. According to various implementations, the nanostructure networks have high energy density as well as long cycle life. In some implementations, the nanostructure networks include a conductive network embedded with electrochemically active material. In some implementations, silicon is used as the electrochemically active material. The conductive network may be a metal network such as a copper nanostructure network. Methods of manufacturing the nanostructure networks and electrodes are provided. In some implementations, metal nanostructures can be synthesized in a solution that contains silicon powder to make a composite network structure that contains both. The metal nanostructure growth can nucleate in solution and on silicon nanostructure surfaces.

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Patent Owner(s)

Patent OwnerAddress
AMPRIUS TECHNOLOGIES INC1180 PAGE AVE FREMONT CA 94538

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yu, Tianyue Sunnyvale, US 20 1278

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