Devices having nitride quantum dot and methods of manufacturing the same
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United States of America Patent
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Mar 15, 2016
Grant Date -
Sep 17, 2015
app pub date -
Sep 22, 2014
filing date -
Mar 14, 2014
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Abstract
Devices having nitride quantum dots and methods of manufacturing the same are provided. The device includes a nitride group material substrate, a plurality of nanorods that are formed on the nitride group material layer and are separated from each other, and a nitride quantum dot on each of the nanorods. A pyramid-shaped layer may be further formed between each of the nanorods and the nitride quantum dot. The nanorods and the nitride quantum dot are covered by an upper contact layer. A plurality of nitride quantum dots may be formed on each of the nanorods and the respective nitride quantum dots may have different sizes.
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