Integrated semiconductor device and method for fabricating the same
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United States of America Patent
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Mar 15, 2016
Grant Date -
Mar 10, 2016
app pub date -
Nov 11, 2015
filing date -
Dec 3, 2013
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Abstract
An integrated semiconductor device and method for fabricating the same are provided wherein the integrated semiconductor device comprises a substrate a first stress-inducing layer, a second stress-inducing layer and an integrated circuit layer. The first stress-inducing layer covers on the substrate. The second stress-inducing layer partially covers on the first stress-inducing layer. The integrated circuit layer is bonded over the substrate.
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