Process for producing group III element nitride crystal and apparatus for producing group III element nitride crystal
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United States of America Patent
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Mar 8, 2016
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Aug 5, 2010
app pub date -
Sep 26, 2008
filing date -
Sep 28, 2007
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Abstract
A group III element nitride single crystal is grown on a template immersed in a raw material liquid retained in a crucible and containing a group III material and one of an alkali metal and an alkali earth metal. The raw material liquid remaining after the growth of the single crystal is cooled and solidified, and by feeding a hydroxyl group-containing solution into the crucible, the solidified raw material is removed from around the template, and thus the group III element nitride single crystal is taken out from inside the solidified raw material. The template is disposed at a position away from the bottom of the crucible.
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