Chemical vapor deposited film formed by plasma CVD method

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United States of America Patent

PATENT NO 9281420
APP PUB NO 20150068600A1
SERIAL NO

14382823

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Abstract

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A chemical vapor deposited film includes silicon atoms, oxygen atoms, carbon atoms, and hydrogen atoms. The chemical vapor deposited film is formed by a plasma CVD method such that the concentration of the oxygen atoms is 10-35% by element.

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Patent Owner(s)

  • TORAY ENGINEERING CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujimoto, Takayoshi Otsu, JP 11 27
Yamashita, Masamichi Otsu, JP 13 318

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