Composite semiconductor device with a SOI substrate having an integrated diode
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United States of America Patent
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Mar 8, 2016
Grant Date -
Jan 17, 2013
app pub date -
Jul 9, 2012
filing date -
Jul 15, 2011
priority date (Note) -
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Abstract
There are disclosed herein various implementations of composite semiconductor devices. In one implementation, such a composite semiconductor device includes a semiconductor on insulator (SOI) substrate including a diode and an insulator layer. The composite semiconductor device also includes a transition body formed over the diode, and a transistor formed over the transition body. The diode is connected across the transistor using through-semiconductor vias, external electrical connectors, or a combination of the two.
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