Solution processible hardmasks for high resolution lithography
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United States of America Patent
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Mar 8, 2016
Grant Date -
Sep 6, 2012
app pub date -
Feb 28, 2012
filing date -
Feb 28, 2011
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Abstract
Solution processible hardmasks are described that can be formed from aqueous precursor solutions comprising polyoxometal clusters and anions, such as polyatomic anions. The solution processible metal oxide layers are generally placed under relatively thin etch resist layers to provide desired etch contrast with underlying substrates and/or antireflective properties. In some embodiments, the metal oxide hardmasks can be used along with an additional hardmask and/or antireflective layers. The metal oxide hardmasks can be etched with wet or dry etching. Desirable processing improvements can be obtained with the solution processible hardmasks.
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