Semiconductor device manufacturing method
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United States of America Patent
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Mar 8, 2016
Grant Date -
Jul 24, 2014
app pub date -
Jan 8, 2014
filing date -
Jan 22, 2013
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Abstract
To improve the performance of a semiconductor device, a semiconductor device manufacturing method includes an exposing process of performing pattern exposure of a resist film formed on a substrate by using EUV light reflected from a front surface of an EUV mask as a reflective mask. In this exposing process, the resist film is subjected to pattern exposure by repeating a process of irradiating the resist film with the EUV light by changing a focal position of the EUV light with which the resist film is irradiated, along a film thickness direction of the resist film. After this exposing process, the resist film subjected to pattern exposure is developed to form a resist pattern.
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