Method for producing gallium trichloride gas and method for producing nitride semiconductor crystal

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9281180
APP PUB NO 20130130477A1
SERIAL NO

13697218

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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According to the invention, there is provided a method for producing a gallium trichloride gas, the method including: a first step of reacting a metallic gallium and a chlorine gas to produce a gallium monochloride gas; and a second step of reacting the produced gallium monochloride gas and a chlorine gas to produce a gallium trichloride gas.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYTOKYO JAPAN

International Classification(s)

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  • 2011 Application Filing Year
  • C23C Class
  • 1852 Applications Filed
  • 1328 Patents Issued To-Date
  • 71.71 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2011201220132014201520162017201820192020202120220255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Koukitu, Akinori Tokyo, JP 38 242
Kumagai, Yoshinao Tokyo, JP 28 183

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Patent Citation Ranking

  • 1 Citation Count
  • C23C Class
  • 18.59 % this patent is cited more than
  • 9 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges27293913750251255742501 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +0501001502002503003504004505005506006507007508008509009501000

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