Method for repairing mask for EUV exposure and mask for EUV exposure
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United States of America Patent
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Mar 8, 2016
Grant Date -
Dec 12, 2013
app pub date -
Aug 19, 2013
filing date -
Mar 31, 2011
priority date (Note) -
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Abstract
A mask for EUV exposure and a method for repairing a mask for EUV exposure. The mask includes: a Mo/Si multi-layer film including a molybdenum layer and a silicon layer and being deposited on a substrate; a protection film formed on the Mo/Si multi-layer film; an absorption film formed on the protection film; and a reflectivity enhancing portion having a plurality of holes in the protection film. The method includes: specifying a position of a defect of the Mo/Si multi-layer film in an area of the protection film; and irradiating light beam, of which a diameter is narrowed down to be at or less than a wavelength of EUV exposure light, onto an area covering the position of the defect in a plan view of the mask for EUV exposure to form the reflectivity enhanced portion. The maximum width of the holes is equal to or less than the wavelength.
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