Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures
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United States of America Patent
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Mar 1, 2016
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Feb 17, 2015
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Mar 20, 2014
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Abstract
Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.
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