Semiconductor light-emitting diode and method for manufacturing the same
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United States of America Patent
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Feb 23, 2016
Grant Date -
Dec 25, 2014
app pub date -
Sep 6, 2014
filing date -
Mar 6, 2012
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Abstract
A semiconductor light-emitting diode, including: an n-GaN layer, a quantum well layer, an electron blocking layer, and a p-GaN layer, which are sequentially stacked on a substrate. The electron blocking layer includes at least one first AlGaN layer and at least one second AlGaN layer. The first AlGaN layer and the second AlGaN layer are alternately stacked. The adjacent first and second AlGaN layers have different Al component.
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