Low resistance power switching device
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United States of America Patent
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Feb 23, 2016
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N/A
app pub date -
Jan 14, 2015
filing date -
Mar 7, 2013
priority date (Note) -
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Abstract
A semiconductor device includes a semiconductor substrate with doped regions of a first type and doped regions of a second type. A first metallization layer connects to the doped regions of the first type through conductive paths, such that current is able to flow within the metallization layer along a plurality of linear axes. A second metallization layer connects to the doped regions of the second type through conductive paths, such that that current is able to flow within the metallization layer along a plurality of linear axes. Contacts on an exterior surface of the semiconductor device can be arranged concentrically.
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