Method of manufacturing semiconductor device using the same
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United States of America Patent
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Feb 23, 2016
Grant Date -
Oct 30, 2014
app pub date -
Jul 3, 2014
filing date -
Jul 27, 2009
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Abstract
Provided are a deposition apparatus and a method of manufacturing a semiconductor device. In the method, a reaction chamber provided with a gaseous source supply unit and a liquid source supply unit is prepared, and an etch stop layer is formed on a substrate by using a gaseous source. Then, an interlayer insulation layer is formed on the etch stop layer by using a vaporized liquid source and a vaporized dopant source. In this way, the etch stop layer and the interlayer insulation layer are formed in-situ in the same reaction chamber.
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