Semiconductor structure having buried conductive elements
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United States of America Patent
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Feb 16, 2016
Grant Date -
Dec 17, 2015
app pub date -
Aug 27, 2015
filing date -
Feb 20, 2014
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Abstract
Embodiments for the present invention provide a semiconductor device and methods for fabrication. In an embodiment of the present invention, a semiconductor structure comprises a first conductor horizontally formed on a semiconductor substrate. A second conductor is vertically formed in a semiconductor stack that includes the semiconductor substrate. An oxidized region is formed proximate to the first conductor. The second conductor is formed in a manner to be in electrical communication with the first conductor. The first conductor is formed in a manner to be laterally connected to the second conductor. The first conductor is formed in a manner to not traverse beneath the oxidized region. The first conductor is formed in a manner to have a reduced link-up resistance with adjacent epitaxial material included in the semiconductor structure.
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