Contact plug and method for manufacturing the same

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United States of America Patent

PATENT NO 9263281
APP PUB NO 20150061082A1
SERIAL NO

14015538

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Abstract

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A method for manufacturing a contact plug is provided. The method includes providing a silicon substrate having at least one opening. A titanium layer is conformably formed in the opening. A first barrier layer is conformably formed on the titanium layer in the opening. A rapid thermal process is performed on the titanium layer and the first barrier layer. After performing the rapid thermal process, a second barrier layer is conformably formed on the first barrier layer in the opening.

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Patent Owner(s)

Patent OwnerAddress
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION123 PARK AVE-3RD HSINCHU SCIENCE PARK HSINCHU 30077

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chien, Huan-Yu Taipei, TW 5 1
Chuang, Wen-Jen New Taipei, TW 1 1
Jan, Yi-Tsung Hsinchu, TW 4 5
Kao, Chih-Ming Jhubei, TW 7 3
Kuo, Ting-Yu New Taipei, TW 5 17
Liau, You-Cheng Hsinchu, TW 1 1
Lin, Su-Chen Hsinchu, TW 12 45
Wu, Peng-Fei Jhubei, TW 2 16
Wu, Rong-Gen Taichung, TW 2 2

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