Nanowires made of novel precursors and method for the production thereof
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United States of America Patent
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Feb 16, 2016
Grant Date -
Aug 22, 2013
app pub date -
May 5, 2011
filing date -
May 5, 2010
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Abstract
The invention relates to nanowires which consist of or comprise semiconductor materials and are used for applications in photovoltaics and electronics and to a method for the production thereof. The nanowires are characterized in that they are obtained by a novel method using novel precursors. The precursors represent compounds, or mixtures of compounds, each having at least one direct Si—Si and/or Ge—Si and/or Ge—Ge bond, the substituents of which consist of halogen and/or hydrogen, and in the composition of which the atomic ratio of substituent:metalloid atoms is at least 1:1.
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