Method for manufacturing microstructure

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United States of America Patent

PATENT NO 9263162
APP PUB NO 20150060405A1
SERIAL NO

14473837

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Abstract

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A method is provided for producing a microstructure. The method includes the first step of forming a supporting layer on a base substrate including a silicon substrate provided with recessed sections at a first surface thereof and a metal structure filling the recessed sections so as to come in contact with the metal structure at the first surface, the second step of forming a structure including the metal structure and the supporting layer by selectively etching the silicon substrate to expose at least the surface of the metal structure opposite the surface in contact with the supporting layer from the silicon substrate, and the third step of selectively etching the supporting layer of the metal structure.

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Patent Owner(s)

Patent OwnerAddress
CANON KABUSHIKI KAISHAJAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Teshima, Takayuki Yokohama, JP 63 492

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