Crystal growth system and method for lead-contained compositions using batch auto-feeding
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United States of America Patent
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Feb 16, 2016
Grant Date -
Jun 11, 2015
app pub date -
Apr 30, 2014
filing date -
Nov 2, 2001
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Abstract
This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).
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