Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 9, 2016
Issued Date -
N/A
app pub date -
Feb 12, 2013
filing date -
Aug 15, 2011
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor processing composition and method for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate comprising copper, low-k dielectric material and TiN, TiNxOy or W wherein the composition includes water, at least one halide anion selected from Cl− or Br−, and, where the metal hard mask comprises only TiN or TiNxOy, optionally at least one hydroxide source.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully