ALD processing techniques for forming non-volatile resistive switching memories
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United States of America Patent
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Feb 2, 2016
Grant Date -
Dec 11, 2014
app pub date -
Aug 25, 2014
filing date -
Jun 5, 2008
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Abstract
ALD processing techniques for forming non-volatile resistive-switching memories are described. In one embodiment, a method includes forming a first electrode on a substrate, maintaining a pedestal temperature for an atomic layer deposition (ALD) process of less than 100° Celsius, forming at least one metal oxide layer over the first electrode, wherein the forming the at least one metal oxide layer is performed using the ALD process using a purge duration of less than 20 seconds, and forming a second electrode over the at least one metal oxide layer.
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