Tunnel effect transistor
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United States of America Patent
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Feb 2, 2016
Grant Date -
Sep 11, 2014
app pub date -
Mar 6, 2014
filing date -
Mar 6, 2013
priority date (Note) -
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Abstract
A tunnel effect transistor includes a channel made of an intrinsic semiconductor material; source and drain extension regions on either side of the channel, the source extension region being made of a semiconductor material doped according to a first type of doping P or N and the drain extension region being made of a semiconductor material doped according to a second type of doping opposite to said first type of doping; source and drain conductive regions respectively in contact with the source and drain extension regions; a gate structure including a gate dielectric layer in contact with the channel and a gate area arranged such that the gate dielectric layer is arranged between the gate area and the channel; and an area doped according to the first type of doping inserted between the channel and the drain extension region.
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