III-nitride semiconductor device with reduced electric field

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United States of America Patent

PATENT NO 9252256
SERIAL NO

14332292

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Abstract

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A conductive field plate is formed between the drain electrode and gate of each cell of a III-Nitride semiconductor and is connected to the source electrode to reduce the electric field between the gate and the drain. The electrodes may be supported on N+ III-Nitride pad layers and the gate may be a Schottky gate or an insulated gate.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AMERICAS CORP101 N SEPULVEDA BLVD EL SEGUNDO CA 90245

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  • 2014 Application Filing Year
  • H01L Class
  • 23828 Applications Filed
  • 21803 Patents Issued To-Date
  • 91.51 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2014201520162017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Briere, Michael A Scottsdale, US 133 1712

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1792827316886303131891006776342711301 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +050010001500200025003000350040004500500055006000650070007500800085009000

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