Semiconductor arrangement and formation thereof
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United States of America Patent
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-
Feb 2, 2016
Grant Date -
Dec 3, 2015
app pub date -
May 29, 2014
filing date -
May 29, 2014
priority date (Note) -
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Abstract
A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes a semiconductor column having a first portion comprising a first material, a second portion comprising a second material, and a third portion comprising a third material, where the second material is different than the first material and the third material. The first portion, the second portion, and the third portion have substantially equal widths. A first abrupt interface exists between a top surface of the first portion and a bottom surface of the second portion, and a second abrupt interface exists between a top surface of the second portion and a bottom surface of the third portion, in an embodiment. In an embodiment, the column forms part of a transistor where the first portions functions as a source or drain, the second portion functions as a channel, and the third portion functions as a drain or source.
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