Semiconductor device and production method thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 26, 2016
Grant Date -
Nov 21, 2013
app pub date -
Dec 3, 2012
filing date -
May 17, 2012
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An aluminum material can be used on a surface of the electrode of a semiconductor element, this aluminum layer need not be formed thick unnecessarily, a copper wire is bonded strongly to the semiconductor element irrespective of a diameter of the wire, and high heat resistance can be achieved. Silicon carbide (SiC) is used as a substrate of the semiconductor element 10, the titanium layer 20 and the aluminum layer 21 are formed as the electrode 15 on the silicon carbide substrate, and by a ball bonding or a wedge bonding of the copper wire 16 to the aluminum layer 21 of the electrode 15 while applying ultrasonic wave, the copper-aluminum compound layer 23 (Al4Cu9, AlCu or the like) is formed between the copper wire 16 and the titanium layer 20.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully