Method for manufacturing light-emitting devices with improved active-region
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United States of America Patent
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Jan 12, 2016
Grant Date -
Aug 22, 2013
app pub date -
Mar 18, 2013
filing date -
Jun 25, 2010
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Abstract
A light-emitting device comprises an active-region sandwiched between an n-type layer and a p-type layer, that allows lateral carrier injection into the active-region so as to reduce heat generation in the active-region and to minimize additional forward voltage increase associated with bandgap discontinuity. In some embodiments, the active-region is a vertically displaced multiple-quantum-well (MQW) active-region. A method for fabricating the same is also provided.
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